 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) ( ) 0.120 @ VGS= 10V 0.180 @ VGS= 4.5V ID (A) 3.2 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features * * * * * Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package D1 D2 G1 S1 G2 S2 Applications * * * DC-DC converters Power management functions Motor control S1 G1 D1 D1 D2 D2 Pin out - top view Ordering information Device ZXMN6A11DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 S2 G2 Device marking ZXMN 6A11D Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN6A11DN8 Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25C(b) @ VGS= 10V; Tamb=70C(b) @ VGS= 10V; Tamb=25C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25C(a)(d) Linear derating factor Power dissipation at Tamb =25C(a)(e) Linear derating factor Power dissipation at Tamb =25C(b)(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD IDM IS ISM PD Symbol VDSS VGS ID Limit 60 20 3.2 2.6 2.5 13.7 3.1 13.7 1.25 10 1.8 14 2.1 17 -55 to +150 A A A W mW/C W mW/C W mW/C C Unit V V A Thermal resistance Parameter Junction to ambient(a)(d) Junction to ambient(a)(e) Junction to ambient(b)(d) Symbol R JA R JA R JA Limit 100 70 60 Unit C/W C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN6A11DN8 Typical characteristics Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN6A11DN8 Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (*) Forward transconductance(*)() Dynamic() Input capacitance Output capacitance Reverse transfer capacitance Switching () () Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge Total gate charge Gate-source charge Gate drain charge Source-drain diode Diode forward voltage(*) Reverse recovery time() Reverse recovery charge() VSD trr Qrr 0.85 21.5 20.5 0.95 V ns nC Tj=25C, IS= 2.8A, VGS=0V Tj=25C, IS= 2.5A, di/dt=100A/ s td(on) tr td(off) tf Qg Qg Qgs Qgd 1.95 3.5 8.2 4.6 3.0 5.7 1.25 0.86 ns ns ns ns nC nC nC nC VDS= 15V, VGS= 5V ID= 2.5A VDS= 15V, VGS= 10V ID= 2.5A VDD= 30V, ID= 2.5A RG6.0 , VGS= 10V Ciss Coss Crss 330 35.2 17.1 pF pF pF VDS= 40V, VGS=0V f=1MHz IDSS IGSS VGS(th) RDS(on) gfs 4.9 1.0 0.120 0.180 S 60 1.0 100 V A nA V ID= 250 A, VGS=0V VDS= 60V, VGS=0V VGS=20V, VDS=0V ID= 250 A, VDS=VGS VGS= 10V, ID= 2.5A VGS= 4.5V, ID = 2A VDS= 15V, ID= 2.5A Symbol Min. Typ. Max. Unit Conditions NOTES: (*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN6A11DN8 Typical characteristics Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN6A11DN8 Typical characteristics Current regulator QG 12V 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VCC 10% VGS td(on) t(on) tr td(off) t(on) tr Switching time waveforms Switching time test circuit Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com ZXMN6A11DN8 Intentionally left blank Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN6A11DN8 Package outline - SO8 DIM A A1 D H E L Inches Min. 0.053 0.004 0.189 0.228 0.150 0.016 Max. 0.069 0.010 0.197 0.244 0.157 0.050 Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27 DIM e b c h - Inches Min. 0.013 0.008 0 0.010 Max. 0.020 0.010 8 0.020 0.050 BSC Millimeters Min. 0.33 0.19 0 0.25 Max. 0.51 0.25 8 0.50 1.27 BSC Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com |
Price & Availability of ZXMN6A11DN8
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |